Moiré Surface States and Enhanced Superconductivity in Topological Insulators

نویسندگان

چکیده

Recently, moiré superlattices have been found on the surface of topological insulators due to rotational misalignment topmost layers. In this work, we study effects states using a continuum model Dirac electrons moving in periodic potential. Unlike twisted bilayer graphene, cannot host isolated bands their nature. Instead, find (high-order) van Hove singularities (VHS) band structure that give rise divergent density (DOS) and enhance interaction effects. Because spin-momentum locking states, possible channels are limited. presence phonon mediated attraction, superconductivity is strongly enhanced by power-law DOS at high-order VHS. The transition temperature Tc exhibits dependence retarded electron-phonon strength ?*. This enhancement be robust under various perturbations from VHS.1 MoreReceived 27 October 2020Revised 9 February 2021Accepted March 2021DOI:https://doi.org/10.1103/PhysRevX.11.021024Published American Physical Society terms Creative Commons Attribution 4.0 International license. Further distribution work must maintain attribution author(s) published article’s title, journal citation, DOI.Published SocietyPhysics Subject Headings (PhySH)Research AreasDensity statesElectron-phonon couplingSuperconductivitySurface statesTopological insulatorsvan singularityPhysical SystemsInterfacesSuperlatticesSurfacesVan der Waals systemsTechniquesBCS theoryRenormalizationk dot p methodCondensed Matter, Materials & Applied Physics

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Surface States of Topological Insulators

We introduce a topological boundary condition to study the surface states of topological insulators within a long-wavelength four-band model. We find that the Dirac point energy, the band curvature, and the spin texture of surface states are crystal-face dependent. For an arbitrary termination of a bulk crystal, the energy of the symmetry protected Dirac point is determined by the bulk physics ...

متن کامل

Connectivity of edge and surface states in topological insulators

Yongjin Jiang,1,2 Feng Lu,1 Feng Zhai,1 Tony Low,3 and Jiangping Hu2 1Center for Statistical and Theoretical Condensed Matter Physics, and Department of Physics, Zhejiang Normal University, Jinhua 321004, People’s Republic of China 2Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA 3IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA (Received 6 Se...

متن کامل

Surface state magnetization and chiral edge states on topological insulators.

We study the interaction between a ferromagnetically ordered medium and the surface states of a topological insulator with a general surface termination that were identified recently [F. Zhang et al. Phys. Rev. B 86, 081303(R) (2012)]. This interaction is strongly crystal face dependent and can generate chiral states along edges between crystal facets even for a uniform magnetization. While mag...

متن کامل

Magnetization of the metallic surface states in topological insulators.

We calculate the magnetization of the helical metallic surface states of a topological insulator. We account for the presence of a small sub-dominant Schrödinger piece in the Hamiltonian in addition to the dominant Dirac contribution. This breaks particle-hole symmetry. The cross-section of the upper Dirac cone narrows while that of the lower cone broadens. The sawtooth pattern seen in the magn...

متن کامل

Interacting Surface States of Three-Dimensional Topological Insulators.

We numerically investigate the surface states of a strong topological insulator in the presence of strong electron-electron interactions. We choose a spherical topological insulator geometry to make the surface amenable to a finite size analysis. The single-particle problem maps to that of Landau orbitals on the sphere with a magnetic monopole at the center that has unit strength and opposite s...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review X

سال: 2021

ISSN: ['2160-3308']

DOI: https://doi.org/10.1103/physrevx.11.021024